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FGP20N60UFD 600V, 20A Field Stop IGBT
October 2008
FGP20N60UFD
600V, 20A Field Stop IGBT
Features
* High current capability * Low saturation voltage: VCE(sat) =1.8V @ IC = 20A * High input impedance * Fast switching * RoHS compliant
tm
General Description
Using Novel Field Stop IGBT Technology, Fairchild's new series of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential.
Applications
* Induction Heating, UPS, SMPS, PFC
C
G
1
TO-220 E
1.Gate 2.Collector 3.Emitter
Absolute Maximum Ratings
Symbol
VCES VGES IC ICM (1) PD TJ Tstg TL
Description
Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds @ TC = 25oC @ TC = 100oC @ TC = 25 C @ TC = 25 C @ TC = 100 C
o o o
Ratings
600 20 40 20 60 165 66 -55 to +150 -55 to +150 300
Units
V V A A A W W
o o o
C C C
Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT) RJC(Diode) RJA
Parameter
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Typ.
-
Max.
0.76 2.51 62.5
Units
o o
C/W C/W
oC/W
(c)2008 Fairchild Semiconductor Corporation
1
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FGP20N60UFD Rev. A
FGP20N60UFD 600V, 20A Field Stop IGBT
Package Marking and Ordering Information
Device Marking
FGP20N60UFD
Device
FGP20N60UFDTU
Package
TO-220
Packaging Type
Tube
Max Qty Qty per Tube
50ea
per Box
-
Electrical Characteristics of the IGBT
Symbol
Off Characteristics BVCES BVCES TJ ICES
TC = 25C unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250A Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current VGE = 0V, IC = 250A VCE = VCES, VGE = 0V, TC = 25oC VCE = VCES, VGE = 0V, TC = 125oC
600 -
0.6 -
250 1 400
V V/oC A mA nA
IGES
G-E Leakage Current
VGE = VGES, VCE = 0V
On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 250A, VCE = VGE IC = 20A, VGE = 15V IC = 20A, VGE = 15V, TC = 125oC 4.0 5.0 1.8 2.0 6.5 2.4 V V V
Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz 940 110 40 pF pF pF
Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCE = 400V, IC = 20A, VGE = 15V VCC = 400V, IC = 20A, RG = 10, VGE = 15V, Inductive Load, TC = 125oC VCC = 400V, IC = 20A, RG = 10, VGE = 15V, Inductive Load, TC = 25oC 13 17 87 32 0.38 0.26 0.64 13 16 92 63 0.41 0.36 0.77 63 7 32 64 ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ nC nC nC
FGP20N60UFD Rev. A
2
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FGP20N60UFD 600V, 20A Field Stop IGBT
Electrical Characteristics of the Diode
Symbol
VFM trr Qrr
TC = 25C unless otherwise noted
Parameter
Diode Forward Voltage IF = 10A
Test Conditions
TC = 25oC TC = 125oC TC = 25oC IES =10A, dIES/dt = 200A/s TC = 125oC
o
Min.
-
Typ.
1.9 1.7 35 57 41 96
Max
2.5 -
Units
V
Diode Reverse Recovery Time
ns
Diode Reverse Recovery Charge
TC = 25oC TC = 125 C
nC
FGP20N60UFD Rev. A
3
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FGP20N60UFD 600V, 20A Field Stop IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
60
TC = 25 C
o
Figure 2. Typical Output Characteristics
60
TC = 125 C
o
20V 15V
12V
20V 15V
12V 10V
Collector Current, IC [A]
40
Collector Current, IC [A]
10V
40
20
VGE = 8V
20
VGE = 8V
0 0.0
1.5 3.0 4.5 Collector-Emitter Voltage, VCE [V]
6.0
0 0.0
1.5 3.0 4.5 Collector-Emitter Voltage, VCE [V]
6.0
Figure 3. Typical Saturation Voltage Characteristics
60
Common Emitter VGE = 15V
Figure 4. Transfer Characteristics
60
Common Emitter VCE = 20V
Collector Current, IC [A]
Collector Current, IC [A]
TC = 25 C
o
TC = 25 C TC = 125 C
o
o
40
TC = 125 C
o
40
20
20
0 0 1 2 3 Collector-Emitter Voltage, VCE [V] 4
0 4 6 8 10 Gate-Emitter Voltage,VGE [V] 12
Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level
3.2
Common Emitter VGE = 15V
Figure 6. Saturation Voltage vs. VGE
20
Collector-Emitter Voltage, VCE [V]
Common Emitter TC = -40 C
o
Collector-Emitter Voltage, VCE [V]
2.8
40A
16
2.4 2.0
20A
12
8
40A
1.6 1.2 0.8 25
IC = 10A
4
20A IC = 10A
50 75 100 125 o Collector-EmitterCase Temperature, TC [ C]
0
0
4 8 12 16 Gate-Emitter Voltage, VGE [V]
20
FGP20N60UFD Rev. A
4
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FGP20N60UFD 600V, 20A Field Stop IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Collector-Emitter Voltage, VCE [V]
Common Emitter TC = 25 C
o
Figure 8. Saturation Voltage vs. VGE
20
Common Emitter TC = 125 C
o
Collector-Emitter Voltage, VCE [V]
16
16
12
12
8
40A
8
20A
4
20A IC = 10A
4
IC = 10A
40A
0
0
4 8 12 16 Gate-Emitter Voltage, VGE [V]
20
0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20
Figure 9. Capacitance Characteristics
2500
Common Emitter VGE = 0V, f = 1MHz
Figure 10. Gate charge Characteristics
15
Common Emitter
o
2000
Capacitance [pF]
TC = 25 C
o
Gate-Emitter Voltage, VGE [V]
TC = 25 C
12
300V 200V
1500
Cies
9
VCC = 100V
1000
Coes
6
500
Cres
3
0 0.1
1 10 Collector-Emitter Voltage, VCE [V]
30
0 0 20 40 60 Gate Charge, Qg [nC] 80
Figure 11. SOA Characteristics
100
10s 100s 1ms 10 ms
Figure 12. Turn-on Characteristics vs. Gate Resistance
100
Collector Current, Ic [A]
10
Switching Time [ns]
1
DC
tr
0.1
Single Nonrepetitive Pulse TC = 25oC Curves must be derated linearly with increase in temperature
td(on)
10
Common Emitter VCC = 400V, VGE = 15V IC = 20A TC = 25 C TC = 125 C
o o
0.01 1 10 100 Collector-Emitter Voltage, VCE [V] 1000
5 0 10 20 30 40 Gate Resistance, RG [] 50 60
FGP20N60UFD Rev. A
5
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FGP20N60UFD 600V, 20A Field Stop IGBT
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs. Gate Resistance
1000
Common Emitter VCC = 400V, VGE = 15V IC = 20A
Figure 14. Turn-on Characteristics vs. Collector Current
200
Common Emitter VGE = 15V, RG = 10
100
Switching Time [ns]
TC = 25 C TC = 125 C tr
o
o
Switching Time [ns]
TC = 25 C TC = 125 C
o
o
td(off)
100
tf
10
td(on)
10 0 10 20 30 40 50 60
Gate Resistance, RG []
3 0 10 20 30 40
Collector Current, IC [A]
Figure 15. Turn-off Characteristics vs. Collector Current
300
Common Emitter VGE = 15V, RG = 10 TC = 25 C
o o
Figure 16. Switching Loss vs. Gate Resistance
3
Common Emitter VCC = 400V, VGE = 15V IC = 20A TC = 25 C TC = 125 C
o o
Switching Loss [mJ]
Switching Time [ns]
TC = 125 C
1
100
td(off)
Eon
tf
Eoff
10 0 10 20 30 40
Collector Current, IC [A]
0.1
0
10
20 30 40 Gate Resistance, RG []
50
60
Figure17. Switching Loss vs. Collector Current
10
Common Emitter VGE = 15V, RG = 10 TC = 25 C
o o
Figure18. Turn off Switching SOA Characteristics
100
Switching Loss [mJ]
TC = 125 C
Eon
1
Collector Current, IC [A]
10
Eoff
0.1
Safe Operating Area
0.02 0 10 20 30 40
Collector Current, IC [A]
1 1
VGE = 15V, TC = 125 C
o
10
100
1000
Collector-Emitter Voltage, VCE [V]
FGP20N60UFD Rev. A
6
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FGP20N60UFD 600V, 20A Field Stop IGBT
Typical Performance Characteristics
Figure 19. Forward Characteristics
40
TJ = 125 C
o
Figure 20. Reverse Current
100
TJ = 25 C
o
Reverse Current , IR [A]
Forward Current, IF [A]
10
TJ = 75 C
o
10
TC = 125 C
o
1
TC = 75 C
o
1
TC = 25 C TC = 75 C TC = 125 C
o o o
0.1
o
0.01
TC = 25 C
0.1 0 1 2 3 Forward Voltage, VF [V] 4
1E-3 0 100 200 300 400 Reverse Voltage, VR [V] 500 600
Figure 21. Stored Charge
0.05
Stored Recovery Charge, Qrr [nC] Reverse Recovery Time, trr [ns]
Figure 22. Reverse Recovery Time
60
200A/s
50
di/dt = 100A/s
0.04
40
0.03
di/dt = 100A/s
30
200A/s
0.02
20
0.01 0 5 10 15 20
Forward Current, IF [A]
10 0 5 10 15 20
Forward Current, IF [A]
Figure 23.Transient Thermal Impedance of IGBT
1
0.5
Thermal Response [Zthjc]
0.2
0.1
0.1 0.05 0.02 0.01
0.01
single pulse
PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC
1E-3 1E-5
1E-4
1E-3
0.01
0.1
1
Rectangular Pulse Duration [sec]
FGP20N60UFD Rev. A
7
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FGP20N60UFD 600V, 20A Field Stop IGBT
Mechanical Dimensions
TO-220
FGP20N60UFD Rev. A
8
www.fairchildsemi.com
FGP20N60UFD 600V, 20A Field Stop IGBT
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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative / In Design Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I35
Preliminary
First Production
No Identification Needed Obsolete
Full Production Not In Production
FGP20N60UFD Rev. A
9
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